A Novel Controllable Hybrid-Anode AlGaN/GaN Field-Effect Rectifier with Low Operation Voltage

A novel controllable hybrid-anode AlGaN/GaN field-effect rectifier (HA-FER) with low operation voltage (LOV) is proposed. Its mechanism can be explained by the field-controlled energy band model. This model reveals that the electric field in the AlGaN layer alters the energy band to result in a variation of the two-dimensional electron gas (2DEG) at AlGaN/GaN interface; the field can be changed by the thickness d of the AlGaN layer and the applied bias. As the d reduces below the critical thickness, the 2DEG vanishes and then the channel is pinched of. Therefore, the threshold voltage of HA-FER can be designed as low as 0 V leading to LOV (< 1 V). The analytical characteristic of the HA-FER is calculated and validated by the simulated results. These results also demonstrate that the forward properties of HA-FER are superior to the conventional SBD due to the high Schottky barrier.