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A Ferroelectric Field Effect Device Using Thin Film SnO2and Gate Insulator BaTiO3

Authors :
Kentaro Ito
Hidetoshi Tsuchiya
Source :
Japanese Journal of Applied Physics. 14:1091-1092
Publication Year :
1975
Publisher :
IOP Publishing, 1975.

Subjects

Subjects :
Materials science
Physics and Astronomy (miscellaneous)
Solid-state physics
business.industry
General Engineering
General Physics and Astronomy
Field effect
Insulator (electricity)
Semiconductor device
Dielectric
Ferroelectricity
Optoelectronics
Field-effect transistor
Thin film
business

Details

ISSN :
13474065 and 00214922
Volume :
14
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........f0ab6f70f29c617545673eaa039981a3

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