Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering

Authors :: M. Nitta
K. Ohta
Mikio Takai
S. Ichihara
T. Nakagawa
Ch. Angelov
Satoshi Abo
T. Lohner
Source :: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :584-588
Publication Year :: 2004
Publisher :: Elsevier BV, 2004.
Abstract: Medium energy ion scattering (MEIS) combining a toroidal electrostatic analyzer with an energy resolution (dE/E) of 4 × 10−3 has been used for ultra-shallow depth profiling of As implanted into Si at 1, 2 and 5 keV to a dose of 1.2 × 1015 ions/cm2 before and after spike annealing at 1075 °C. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.

Subjects :: Nuclear and High Energy Physics
Dopant
Chemistry
Scattering
Annealing (metallurgy)
Analytical chemistry
chemistry.chemical_element
Electrostatic analyzer
Mass spectrometry
Instrumentation
Spectral line
Arsenic
Ion

ISSN :: 0168583X
Database :: OpenAIRE
Journal :: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Accession number :: edsair.doi...........f0c8bd958596033c38c4dad836ac7271
Full Text :: https://doi.org/10.1016/j.nimb.2004.01.124

Full Text Access

Tools