Optical properties of layered III–VI semiconductor γ-InSe:M (M=Mn, Fe, Co, Ni)

Indium selenide belongs to layered III–VI semiconductors with highly anisotropic optical and electronic properties. Energy gap of 1.32 eV makes this material very attractive for solar energy conversion. We investigated the influence of 1% 3-d transition metals M=Mn, Fe, Co, Ni, used as dopants, on energy levels of InSe:M in the range 1.4–6.5 eV and especially in the range of energy gap