Two-dimensional hot-electron transport in GaAs-AlGaAs heterojunctions

The mobility of a two-dimensional electron gas in GaAs-AlGaAs heterojunction is recomputed through solving numerically the balance equation. The peculiarity of the present study lies in that a new expression for the distribution function and the renormalized phonon frequency are used in the computation. Compared with those reported by previous authors, our result shows better agreement with the experimental data.