Linearity Analysis of Laterally Graded Channel in RF Power MOSFETs

Advanced harmonic balance simulation capabilities have been used to investigate linearity behavior in RF power LDMOS devices with different laterally graded channel doping profiles. Harmonic balance analysis provides relevant device information from device-level simulations and yield performance metrics of RF circuits. The linearity behavior of a simple quasi-1D structures with different graded channel doping profiles was investigated; the analysis was then extended to a more realistic power LDMOS device. The third-order intermodulation distortion product (IM3) reveals the important role of the lateral channel doping in RF power LDMOS. The analysis lays ground-work for device optimization for improved linearity.