Binding Energies of Impurity States in a Strained Wurtzite GaN/AlxGa1-xN Cylindrical Quantum Dot Influenced by Hydrostatic Pressure

In the framework of effective mass approximation,a variational method is adopted to discuss the binding energies of hydrogenic impurity in a strained wurtzite cylindrical quantum dot by considering the hydrostatic pressure.The results indicate that the binding energies of hydrogenic impurity with strain effect are higher than that without strain effect when the quantum dot height is small,but the binding energies with strain effect become lower than that without strain effect as the quantum dot height increases.It is also found that the binding energies of hydrogenic impurity decrease when the mole fraction of Al increase.In addition,the bin-ding energies of impurity increase obviously with hydrostatic pressure,and the hydrostatic pressure has a remarkable influence on the donor binding energy for small quantum dot.