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Surface roughening at the one-monolayer Sb/Si(100) interface
- Source :
- Physical Review B. 65
- Publication Year :
- 2001
- Publisher :
- American Physical Society (APS), 2001.
-
Abstract
- Using scanning tunneling microscopy observations, it has been found that the atomically flat 1-ML Sb/ Si(100) interface is metastable at a temperature of about 750°C and becomes rough upon brief annealing, although the Sb-dimer-row structure of the top layer is completely preserved. The roughening is explained by displacive adsorption of Sb (i.e., by substitution of the top-layer Si atoms by Sb atoms) and this phenomenon is suggested to be a common one for group-V adsorbates on Si(100) and Ge(100) surfaces.
Details
- ISSN :
- 10953795 and 01631829
- Volume :
- 65
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi...........f1bc6ba66a5462622537f85e96a7f4c1
- Full Text :
- https://doi.org/10.1103/physrevb.65.033312