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Defect Complex Effect in Nb Doped TiO2 Ceramics with Colossal Permittivity
- Source :
- Journal of Electronic Materials. 45:5178-5184
- Publication Year :
- 2016
- Publisher :
- Springer Science and Business Media LLC, 2016.
-
Abstract
- Donor-doped Nb x Ti1−x O2 (x = 1%, 2%, 4%, 6%, and 8%) ceramics with giant permittivity (>104) and a very low dielectric loss (∼0.05) were sintered under flowing N2 at 1400°C for 10 h. By increasing Nb doping concentration, two different dielectric responses were evidenced in the frequency dependence of dielectric properties of Nb doped TiO2 ceramics, which corresponded to the space charge polarization and the electron-pinned defect-dipoles effect, respectively. Especially, combined with the x-ray photoelectron spectroscopy results, the electron-pinned defect-dipoles induced by the $$2({\hbox{Nb}}^{5 + } )_{\rm{Ti}}^{ \bullet } \to 4({\hbox{Ti}}^{3 + } )^{\prime}_{\rm{Ti}} \leftarrow {\hbox{V}}_{\rm{o}}^{ \bullet \bullet }$$ defect complex were further confirmed to give rise to both their high er and low tan δ in the high frequency range for the Nb x Ti1−x O2 ceramics with x > 4%.
- Subjects :
- 010302 applied physics
Permittivity
Materials science
Solid-state physics
Doping
Analytical chemistry
Nanotechnology
02 engineering and technology
Dielectric
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Electronic, Optical and Magnetic Materials
Nb doped
X-ray photoelectron spectroscopy
visual_art
0103 physical sciences
Materials Chemistry
visual_art.visual_art_medium
Dielectric loss
Ceramic
Electrical and Electronic Engineering
0210 nano-technology
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 45
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........f1c482ce28c550782ad523345f2df836