Effect of temperature on the conductance of GNRFET

Graphene nano ribbons are the strips of graphene sheet which opens band gap in graphene. This opening of band gap increases the on off ratio of these GNR devices and allows its use in logic circuit applications. GNR in transistors give vital applications in these areas. A GNRFET shows large conductance with respect to gate voltages. The effect of temperature on this conductance is seen in this paper by simulating a GNRFET model in VNL. A GNRFET with zigzag electrodes and armchair channel is studied. The conductance with respect to temperature is seen. A temperature range of 0 to 2000 K is selected for the study.