The reaction of ion-beam mixed titanium layers on silicon induced by electron beam heating

Thin titanium layers on silicon were ion-beam mixed with arsenic and antimony ions. The layers were reacted by electron beam heating under different time and temperature conditions and the properties of the reacted layers were explored by sheet resistance measurements, SEM and Rutherford backscattering spectrometry (RBS). Reaction times as short as a few milliseconds have resulted in the simultaneous formation of stable TiSi2 layers and shallow n+p junctions with acceptable electrical characteristics. RBS analysis confirms that arsenic diffuses readily through the silicide layer while antimony shows a tendency to pile up at the interface.