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1 nm NiSi/Si Junction Design based on First-Principles Calculation for Ultimately Low Contact Resistance

Authors :
Yoshinori Tsuchiya
K. Kato
Junji Koga
Atsuhiro Kinoshita
Takashi Yamauchi
Source :
2006 International Electron Devices Meeting.
Publication Year :
2006
Publisher :
IEEE, 2006.

Abstract

This paper studies the Schottky barrier height (SBH) modulation effect induced by dipoles generation at the nickel silicide (NiSi)/silicon (Si) interface, based on first-principles calculations. Dipole comforting SBH is dramatically reduced to 0.1 eV in 1 nm region around the interface for the case of B atoms substituted for Si atoms. The results suggest that NiSi with appropriate dopant preparation is a plausible electrode material for ultimately small p-MOSFETs

Details

Database :
OpenAIRE
Journal :
2006 International Electron Devices Meeting
Accession number :
edsair.doi...........f353ad27746d55213f7d7af0e347e477
Full Text :
https://doi.org/10.1109/iedm.2006.346791