Novel Vertical SOI-Based 1T-DRAM With Trench Body Structure

MLA

Jyi-Tsong Lin, et al. “Novel Vertical SOI-Based 1T-DRAM With Trench Body Structure.” IEEE Transactions on Electron Devices, vol. 60, June 2013, pp. 1872–77. EBSCOhost, https://doi.org/10.1109/ted.2013.2259171.

APA

Jyi-Tsong Lin, Po-Hsieh Lin, Yun-Ru Chen, & Yi-Chuen Eng. (2013). Novel Vertical SOI-Based 1T-DRAM With Trench Body Structure. IEEE Transactions on Electron Devices, 60, 1872–1877. https://doi.org/10.1109/ted.2013.2259171

Chicago

Jyi-Tsong Lin, Po-Hsieh Lin, Yun-Ru Chen, and Yi-Chuen Eng. 2013. “Novel Vertical SOI-Based 1T-DRAM With Trench Body Structure.” IEEE Transactions on Electron Devices 60 (June): 1872–77. doi:10.1109/ted.2013.2259171.