Back to Search
Start Over
High-performance self-aligned gate AlGaAs/GaAs MODFET voltage comparator
- Source :
- IEEE Electron Device Letters. 8:431-433
- Publication Year :
- 1987
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1987.
-
Abstract
- A very high-performance voltage comparator circuit has been demonstrated using self-aligned gate AlGaAs/GaAs modulation-doped FET's (MODFET's)and laser-trimmable CrSi-based thin-film resistors. The MODFET master/slave comparator circuits demonstrated analog input resolutions of < 1 and 2.5 mV at sampling rates of 0.5 and 1 GHz, respectively, at Nyquist analog input rates at room temperature. The MODFET comparators operated to sampling rates greater than 2.5 GHz at Nyquist analog input rates. Static hysteresis of less than 1 mV was observed for some comparators at room temperature. The self-aligned gate MODFET's demonstrated average threshold-voltage offsets for closely spaced FET pairs of 2.53 ± 1.15 mV, and typical static hysteresis levels of < 1 to 3 mV. These MODFET comparators demonstrated the highest analog input resolution at gigahertz sampling frequencies ever reported, including comparators fabricated using AlGaAs/GaAs heterojunction bipolar transistors (HBT's).
- Subjects :
- Materials science
Comparator
business.industry
Bipolar junction transistor
Electrical engineering
Integrated circuit
Self-aligned gate
Electronic, Optical and Magnetic Materials
law.invention
Gallium arsenide
chemistry.chemical_compound
chemistry
law
Optoelectronics
Electrical and Electronic Engineering
Resistor
business
Voltage
Electronic circuit
Subjects
Details
- ISSN :
- 07413106
- Volume :
- 8
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........f3a031c20d494c30fb5f7384501402a3