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A novel MEMS inertial sensor with enhanced sensing capacitors
- Source :
- Journal of Semiconductors. 30:054003
- Publication Year :
- 2009
- Publisher :
- IOP Publishing, 2009.
-
Abstract
- A novel MEMS inertial sensor with enhanced sensing capacitors is developed. The designed fabricated process of the sensor is a deep RIE process, which can increase the mass of the seismic to reduce the mechanical noise, and the designed capacitance sensing method is changing the capacitance area, which can reduce the air damping between the sensing capacitor plates and reduce the requirement for the DRIE process precision, and reduce the electronic noise by increasing the sensing voltage to improve the resolution. The design and simulation are also verified by using the FEM tool ANSYS. The simulated results show that the transverse sensitivity of the sensor is approximately equal to zero. Finally, the fabricated process based on silicon–glass bonding and the preliminary test results of the device for testing grid capacitors and the novel inertial sensor are presented. The testing quality factor of the testing device based on the slide-film damping effect is 514, which shows that the enhanced capacitors can reduce mechanical noise. The preliminary testing result of the sensitivity is 0.492 pf/g.
- Subjects :
- Microelectromechanical systems
Engineering
business.industry
Process (computing)
Condensed Matter Physics
Capacitance
Finite element method
Electronic, Optical and Magnetic Materials
law.invention
Capacitor
Hardware_GENERAL
law
Hardware_INTEGRATEDCIRCUITS
Materials Chemistry
Electronic engineering
Deep reactive-ion etching
Sensitivity (control systems)
Electrical and Electronic Engineering
business
Voltage
Subjects
Details
- ISSN :
- 16744926
- Volume :
- 30
- Database :
- OpenAIRE
- Journal :
- Journal of Semiconductors
- Accession number :
- edsair.doi...........f3bd05b375f0fdcde97e8bf0a55c9fe3