Cite
A 0.65V 1316µm2Fully Synthesizable Digital Temperature Sensor Using Wire Metal Achieving O.16nJ.%2-Accuracy FoM in 5nm FinFET CMOS
MLA
Junghyun Park, et al. “A 0.65V 1316µm2Fully Synthesizable Digital Temperature Sensor Using Wire Metal Achieving O.16nJ.%2-Accuracy FoM in 5nm FinFET CMOS.” 2022 IEEE International Solid- State Circuits Conference (ISSCC), Feb. 2022. EBSCOhost, https://doi.org/10.1109/isscc42614.2022.9731766.
APA
Junghyun Park, Jooseong Kim, Kwangho Kim, Jun-Hyeok Yang, Michael Choi, & Jongshin Shin. (2022). A 0.65V 1316µm2Fully Synthesizable Digital Temperature Sensor Using Wire Metal Achieving O.16nJ.%2-Accuracy FoM in 5nm FinFET CMOS. 2022 IEEE International Solid- State Circuits Conference (ISSCC). https://doi.org/10.1109/isscc42614.2022.9731766
Chicago
Junghyun Park, Jooseong Kim, Kwangho Kim, Jun-Hyeok Yang, Michael Choi, and Jongshin Shin. 2022. “A 0.65V 1316µm2Fully Synthesizable Digital Temperature Sensor Using Wire Metal Achieving O.16nJ.%2-Accuracy FoM in 5nm FinFET CMOS.” 2022 IEEE International Solid- State Circuits Conference (ISSCC), February. doi:10.1109/isscc42614.2022.9731766.