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Investigation of the effects of polishing and etching on the quality of Cd1−xZnxTe using spatial mapping techniques
- Source :
- Journal of Electronic Materials. 26:529-533
- Publication Year :
- 1997
- Publisher :
- Springer Science and Business Media LLC, 1997.
-
Abstract
- We examined the effects of polishing and etching on the structural and electrical properties of various high pressure Bridgman Cd1−xZnxTe (CZT) crystals using high resolution x-ray diffraction (HRXRD) and alpha particle mapping. Two etching solutions investigated are: (1) standard bromine-methanol solution, and (2) standard solution mixed with lactic acid. HRXRD, and in particular, triple axis x-ray diffraction (TAXRD) showed the effectiveness of the bromine-methanol etch in removing residual strain and damage from the CZT crystal. TAXRD mapping of a ∼5 cm2 CZT crystal after etching resulted in a reduction of the average rocking curve full width at half maximum to 15 arc-sec (compared to 23 arc-sec for the “as-received”). Alpha particle mapping of the electron risetime and the pulse height spectrum, along with leakage current measurements, showed varying effects of the different etching solutions on the surface properties (and hence their influence on the electrical and detector properties). These preliminary results show the importance and the sensitivity of the overall detector properties on the surface preparation conditions of CZT crystals used as radiation detectors.
- Subjects :
- Diffraction
Materials science
Solid-state physics
Analytical chemistry
Polishing
Condensed Matter Physics
Particle detector
Electronic, Optical and Magnetic Materials
Cadmium zinc telluride
Crystal
Full width at half maximum
chemistry.chemical_compound
chemistry
Etching (microfabrication)
Materials Chemistry
Electrical and Electronic Engineering
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 26
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........f533d948eef91282dd4506cb54b2594e
- Full Text :
- https://doi.org/10.1007/s11664-997-0189-2