Improvement of Bonded Silicon-on-Insulator using TCE-Grown Oxide as Buried SiO2

Silicon-on-insulator (SOI) was fabricated by wafer bonding using thermal SiO2 and trichloroethylene (TCE)-grown SiO2 as the buried oxides. Both the fixed charge density and the interface trap density at the back of silicon films on oxides were found to be appreciably lower for TCE-grown SiO2 than for dry-grown SiO2. The addition of TCE resulted also in significant increases of carrier lifetimes. The bonded SOI strength using TCE-grown SiO2 is comparable to that using dry-grown SiO2.