Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

Authors :: Yearn-Ik Choi
Ho-Young Cha
Hyungtak Kim
Jae-Gil Lee
Chun-Hyung Cho
Sung-Hoon Park
Source :: JSTS:Journal of Semiconductor Technology and Science. 16:215-220
Publication Year :: 2016
Publisher :: The Institute of Electronics Engineers of Korea, 2016.
Abstract: Monolithically integrated devices are strongly desired in next generation power ICs to reduce the chip size and improve the efficiency and frequency response. Three examples of the embedment of different functional diode(s) into AlGaN/GaN heterojunction field-effect transistors are presented, which can minimize the parasitic effects caused by interconnection between devices.