Analysis of experimental data on DX centres in GaAs1−xPx:S

The paper proves the applicability of three models of the DX centre to the experimental results obtained on the sulphur DX centre in GaAs1−xPx:alloys published in the previous paper. Two-level and three-level effective-mass-like models and a three-charge-state model are used. The solution of the charge neutrality eauation for different pressures and temperatures has given the temperature and pressure dependences of the resistivity and of deep-level transient spectroscopy peak amplitudes which are compared with the experimental data. The agreement is good for all three models. In the case of the third model the best agreement is obtained for U ≈ −20meV, that is a negative correlation energy.