Electroluminescence Studies Of Si Bulk Materials Using Al-Si Schottky Diodes

Electroluminescence (EL) of Si bulk materials has been studied using lowly doped substrate with two Al-Si Schottky contacts. By applying a forward bias on the structure, the intense light emissions at 1.094 eV due to the TO-phonon assisted recombination was obtained at 40 K while other TA- and 2TO-associated transitions were also observed. The Si-TO EL peak persists up to RT with a radiative decay of ∼ 5 μs. EL emission mechanisms of these Si Schottky diodes are discussed based on temperature dependent- and injection current-dependent EL measurements.