Back to Search
Start Over
AlGaAs/InGaAs Pseudomorphic High-Electron-Mobility Transistor with a Liquid Phase Deposited SiO2 as Gate Dielectric
- Source :
- ECS Meeting Abstracts. :1810-1810
- Publication Year :
- 2011
- Publisher :
- The Electrochemical Society, 2011.
-
Abstract
- not Available.
Details
- ISSN :
- 21512043
- Database :
- OpenAIRE
- Journal :
- ECS Meeting Abstracts
- Accession number :
- edsair.doi...........f5cc2f170b637e585ef09211d9d76971
- Full Text :
- https://doi.org/10.1149/ma2011-02/25/1810