3-D Packaging and Integration of High-Density Tantalum Capacitors on Silicon

High-density, point-of-load (PoL) power conversion and power delivery are required to continue scaling electronic systems with increased functionality, more bandwidth, and smaller sizes. To meet the demands of these highly complex and miniaturized electronic systems, new 3-D integration schemes of advanced passive and active components are needed to enable the next-generation power distribution networks (PDNs). In addition, shorter interconnect lengths are required to provide low losses and better transient response in switch-based power conversion systems. Tantalum capacitors have the potential to provide some of the highest volumetric densities of any current capacitor technology, but are generally bulky components with low frequency stability, limiting their use in future 3-D power systems. In this paper, a process for the embedding and integration of ultrathin, high-density tantalum capacitors with improved frequency stability is demonstrated. The 5-V capacitors show a density of $1~\mu \text{F}$ /mm2 at 1 MHz with only a 100- $\mu \text{m}$ thickness, and are shown to be capable of direct integration on silicon for short interconnect length of $ . The electrical performance of the capacitors is tested after integration and shows that they retain high capacitance density and low equivalent series resistance (ESR), while also providing low leakage currents. The combination of low loss, high volumetric density, and 3-D integration capability make the capacitors an ideal candidate for next-generation power modules.