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New CMOS inverter-based voltage multipliers

Authors :
Ho-Cheng Lin
Yuh-Shyan Hwang
Dong-Shiuh Wu
Jiann-Jong Chen
Che-Min Kung
Source :
2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).
Publication Year :
2010
Publisher :
IEEE, 2010.

Abstract

Four new CMOS inverter-based voltage multipliers consisted of PMOS/NMOS pass transistors, inverter circuits, and capacitors are proposed in the paper. The proposed voltage multipliers which combine the functions of rectifiers and charge-pumps improve the power conversion efficiency and reduce the number of passive components therefore they are suitable for the integration. The voltage multiplier with positive output voltage is implemented with TSMC 0.35µm CMOS 2P4M processes, and the experimental results have showed good agreement with the theoretical analysis. The chip area without pads is only 1.75×1.32 mm2 for five-stage positive output voltage of voltage multiplier

Details

Database :
OpenAIRE
Journal :
2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
Accession number :
edsair.doi...........f5f83767a1e28205c4e20b36c1df7c60
Full Text :
https://doi.org/10.1109/edssc.2010.5713740