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Magnetic, optical and transport properties of GaMnN films

Authors :
C. N. R. Rao
A.R. Raju
V. Venkataraman
Kripasindhu Sardar
Bhavtosh Bansal
Source :
Solid State Communications. 125:55-57
Publication Year :
2003
Publisher :
Elsevier BV, 2003.

Abstract

GaMnN films with 1–3% Mn deposited on Si(100) and Al 2 O 3 (0001) substrates, by the technique of nebulized spray pyrolysis by employing acetylacetonate precursors, have been characterized by X-ray diffraction, photoluminescence spectra and other techniques. The films are ferromagnetic and show magnetic hysteresis. The ferromagnetic T C increases with the Mn content, with the 3% Mn film showing a T C of ∼250 K. Anomalous Hall effect is observed below T C where the films exhibit a small negative magnetoresistance.

Details

ISSN :
00381098
Volume :
125
Database :
OpenAIRE
Journal :
Solid State Communications
Accession number :
edsair.doi...........f611f8021e8b154f4de98a5d70834107
Full Text :
https://doi.org/10.1016/s0038-1098(02)00621-x