Investigation of basic physical properties and dielectric behavior of a-Se-Sn-Ge-Sb system

The material is investigated for various physical parameters which gives us the formation about glass rigidity and glass forming ability. The cohesive energy has been interpreted using Chemical Bond Approach and glass transition temperature (Tg) has been calculated by using Tichy-Ticha approach. The decrease in glass transition temperature and weakening of structure of the material has been observed due to decrease in mean bond energy. The effect of Sb addition on the dielectric behavior of a bulk glassy material has also been studied at room temperature in the frequency range 20Hz to 1MHz.