Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO2/epi-4H-SiC MOS capacitors

MLA

OmerFaruk Karadavut, et al. “Effect of Oxide Layer Growth Conditions on Radiation Detection Performance of Ni/SiO2/Epi-4H-SiC MOS Capacitors.” Journal of Crystal Growth, vol. 584, Apr. 2022, p. 126566. EBSCOhost, https://doi.org/10.1016/j.jcrysgro.2022.126566.

APA

OmerFaruk Karadavut, Sandeep K. Chaudhuri, Joshua W. Kleppinger, Ritwik Nag, & Krishna C. Mandal. (2022). Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO2/epi-4H-SiC MOS capacitors. Journal of Crystal Growth, 584, 126566. https://doi.org/10.1016/j.jcrysgro.2022.126566

Chicago

OmerFaruk Karadavut, Sandeep K. Chaudhuri, Joshua W. Kleppinger, Ritwik Nag, and Krishna C. Mandal. 2022. “Effect of Oxide Layer Growth Conditions on Radiation Detection Performance of Ni/SiO2/Epi-4H-SiC MOS Capacitors.” Journal of Crystal Growth 584 (April): 126566. doi:10.1016/j.jcrysgro.2022.126566.