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Zinc ion implantation into GaAs0.62P0.38
- Source :
- Applied Physics Letters. 24:320-322
- Publication Year :
- 1974
- Publisher :
- AIP Publishing, 1974.
-
Abstract
- The effects of dose, implantation temperatures, and annealing on the electrical properties of Zn‐implanted GaAs0.62P0.38 were measured. Zinc ion implantation was performed with 20‐keV ions at temperatures between room temperature and 450 °C. The abnormal property that the effective surface concentration exceeds the implanted Zn dose was obtained for the samples implanted at room temperature.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 24
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........f82f2b1a8cb7a41482de938f7e8e44c9
- Full Text :
- https://doi.org/10.1063/1.1655200