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High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates
- Source :
- Semiconductors. 38:732-735
- Publication Year :
- 2004
- Publisher :
- Pleiades Publishing Ltd, 2004.
-
Abstract
- Light-current, spectral, and temperature characteristics of long-wavelength (1.46–1.5 µm) lasers grown on GaAs substrates, with an active area based on InAs-InGaAs quantum dots, are studied. To reach the required lasing wavelength, quantum dots were grown on top of a metamorphic InGaAs buffer layer with an In content of about 20%. The maximum output power in pulsed mode was 7 W at room temperature. The differential efficiency of the laser, which had a 1.5-mm-long cavity, was 50%. The temperature dependence of the threshold current is described by a characteristic temperature of 61 K in the temperature range 10–73°C.
- Subjects :
- Materials science
business.industry
Physics::Optics
Atmospheric temperature range
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Laser
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Power (physics)
law.invention
Condensed Matter::Materials Science
Quantum dot
Quantum dot laser
law
Magnet
Optoelectronics
Pulsed mode
business
Layer (electronics)
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 38
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........f8410e5f2578fcce802797531147eee1