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Transient response of an inhomogeneous MOS transmission line

Authors :
Stevens F. Johnson
Karl E. Lonngren
Source :
Solid-State Electronics. 22:671-675
Publication Year :
1979
Publisher :
Elsevier BV, 1979.

Abstract

Analytical solutions for charge transport in inhomogeneous MOS transmission lines are obtained. The line is assumed to have an initial exponential doping profile. An exact solution is obtained for the case of a constant charge being injected into the structure. An approximate solution is obtained for the case of a fixed voltage being applied at one end of the structure.

Details

ISSN :
00381101
Volume :
22
Database :
OpenAIRE
Journal :
Solid-State Electronics
Accession number :
edsair.doi...........f88113c59008ee0619ea367f221c229d
Full Text :
https://doi.org/10.1016/0038-1101(79)90143-6