Formation of atomically flat interface and effect of silicidation condition on Schottky contact characteristics in ErSi/sub 1.7//Si(100) system

Authors :: Toshifumi Irisawa
Junji Koga
Atsushi Yagishita
Yoshinori Tsuchiya
Source :: Extended Abstracts of the Fifth International Workshop on Junction Technology.
Publication Year :: 2005
Publisher :: IEEE, 2005.
Abstract: We have investigated the Schottky barrier height of ErSi/sub 1.7/ and suitable formation process to achieve the ideal interface. Atomically flat interface has been achieved by high-temperature (700/spl deg/C) furnace annealing, as well as oxide-block W-cap layer. Under this condition, Schottky barrier height value for electron of lower than 0.4 eV has been obtained. In addition, careful control of silicidation anneal is quite important to achieve ideal ErSi/sub 1.7//Si interface.

Subjects :: Materials science
Silicon
chemistry
Annealing (metallurgy)
business.industry
Schottky barrier
Electronic engineering
chemistry.chemical_element
Optoelectronics
Electron
business
Metal–semiconductor junction
Flat interface

Database :: OpenAIRE
Journal :: Extended Abstracts of the Fifth International Workshop on Junction Technology
Accession number :: edsair.doi...........f8f7364814852aec62a97c82cee9a58a
Full Text :: https://doi.org/10.1109/iwjt.2005.203893

Full Text Access

Tools