Back to Search
Start Over
Impact of High-Temperature Annealing on Interfacial Layers Grown by O2 Plasma on Si0.5Ge0.5 Substrates
- Source :
- IEEE Transactions on Electron Devices. 69:1265-1270
- Publication Year :
- 2022
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2022.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 69
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........f90fbf306cb4a2d94596c220ab9071ca