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Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

Authors :
Pooran Chandra Joshi
Neil R. Taylor
Yongchao Yu
Tolga Aytug
Sacit M. Cetiner
Richard T. Mayes
Dianne Ezell
Shannon M. Mahurin
M. Parans Paranthaman
Mi-Hee Ji
Lei Cao
Source :
Applied Physics Letters. 116:252108
Publication Year :
2020
Publisher :
AIP Publishing, 2020.

Abstract

A high-sensitivity 4H–SiC temperature sensor and an alpha detector have been fabricated using additively printed metal contacts. The surface morphology and electrical conductivity of the printed electrodes were established prior to Schottky diode development. 4H–SiC Schottky diodes with direct-write printed silver contacts on the 5 μm-thick epilayer on 4H–SiC were characterized electrically in terms of the forward and reverse current–voltage and high-frequency capacitance–voltage characteristics. The turn-on voltage of the Schottky diodes, as established from the forward current–voltage characteristics measured up to a temperature of 400 °C, showed a linear temperature dependence. Schottky diodes with direct-write printed Ag electrodes were able to measure alpha particles emitted from Americium-241. The high temperature and radiation response of the Schottky diodes show their suitability for multi-modal sensor fusion on the 4H–SiC platform for harsh environment applications.

Details

ISSN :
10773118 and 00036951
Volume :
116
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........f96448c7ca3cf9620b2b657deaa33b35
Full Text :
https://doi.org/10.1063/5.0007496