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0.2-μm p/sup +/-n junction characteristics dependent on implantation and annealing processes
- Source :
- IEEE Electron Device Letters. 20:83-85
- Publication Year :
- 1999
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1999.
-
Abstract
- Junction depth, sheet resistance, dopant activation, and diode leakage current characteristics were measured to find out the optimal processing conditions for the formation of 0.2-/spl mu/m p/sup +/-n junctions. Among the 2/spl times/10/sup 15/ cm/sup -2/ BF/sub 2/ implanted crystalline, As or Ge preamorphized silicon, the crystalline and Ge preamorphized samples exhibit excellent characteristics. The thermal cycle of furnace anneal (FA) followed by rapid thermal anneal (RTA) shows better characteristics than furnace anneal, rapid thermal anneal, or rapid thermal anneal prior to furnace anneal.
- Subjects :
- Materials science
Silicon
Annealing (metallurgy)
Analytical chemistry
chemistry.chemical_element
Dopant Activation
Electronic, Optical and Magnetic Materials
Ion implantation
chemistry
Electronic engineering
Furnace anneal
Electrical and Electronic Engineering
Junction depth
Sheet resistance
Diode
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 20
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........f98082a6efc5aae46f4e1990b549afd7
- Full Text :
- https://doi.org/10.1109/55.740659