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Comparison The Effect of t-BuOH and H2O as O Precursors on ZnO Films Grown by MOCVD Method
- Source :
- Chinese Journal of Luminescence. 33:665-668
- Publication Year :
- 2012
- Publisher :
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 2012.
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Abstract
- The behaviors of ZnO films using t-BuOH and H2O as oxygen precursors were investigated.Despite the fact that both t-BuOH and H2O are of lower activity,the ZnO epilayer has a higher growth rate when t-BuOH is used as oxygen precursor,due to its more effective prevention of the gas phase pre-reaction.Compared with H2O,ZnO epilayer get a better crystal quality by using t-BuOH as oxygen precursor.And the Hall mobility up to 37.0 cm2·V-1·s-1 is achieved in the flim where t-BuOH is used as oxygen precursor.The research shows that t-BuOH is more suitable for oxygen precursor of the MOCVD growth of ZnO epilayer.
Details
- ISSN :
- 10007032
- Volume :
- 33
- Database :
- OpenAIRE
- Journal :
- Chinese Journal of Luminescence
- Accession number :
- edsair.doi...........f9a4dced9bae34757a9cb27ee67ffe62