Comparison The Effect of t-BuOH and H2O as O Precursors on ZnO Films Grown by MOCVD Method

The behaviors of ZnO films using t-BuOH and H2O as oxygen precursors were investigated.Despite the fact that both t-BuOH and H2O are of lower activity,the ZnO epilayer has a higher growth rate when t-BuOH is used as oxygen precursor,due to its more effective prevention of the gas phase pre-reaction.Compared with H2O,ZnO epilayer get a better crystal quality by using t-BuOH as oxygen precursor.And the Hall mobility up to 37.0 cm2·V-1·s-1 is achieved in the flim where t-BuOH is used as oxygen precursor.The research shows that t-BuOH is more suitable for oxygen precursor of the MOCVD growth of ZnO epilayer.