Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge

Authors :: Chen Han Chou
Wen-Kuan Yeh
Chao-Hsin Chien
Yu Hong Lu
An Shih Shih
Yi He Tsai
Source :: ECS Journal of Solid State Science and Technology. 7:N15-N19
Publication Year :: 2018
Publisher :: The Electrochemical Society, 2018.

Subjects :: 010302 applied physics
Materials science
business.industry
Gate stack
chemistry.chemical_element
02 engineering and technology
Yttrium
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
chemistry
0103 physical sciences
Optoelectronics
0210 nano-technology
business
Layer (electronics)

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