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Enhanced near-infrared downconversion luminescence in ZnxNb(1-x)O composite host co-doped Bi3+ /Yb3+ phosphor for Si solar cell applications
- Source :
- Materials Science in Semiconductor Processing. 122:105486
- Publication Year :
- 2021
- Publisher :
- Elsevier BV, 2021.
-
Abstract
- The spectral modiļ¬cation is noticed through near Infrared (IR) downconversion (DC) in Yb3+, Bi3+ co-doped ZnxNb(1-x)O composite host. A high-intensity blue emission centered at 450 nm is observed upon UV excitation at 270 nm for the host ZnxNb(1-x)O at x = 0.5 (ZN). Doping with the optimized concentration at 4 mol% of Yb3+ with ZN (YZN) initiates an energy transfer from the niobate group to two neighboring Yb3+ ions in a co-operative energy transfer (CET) process. The resulting Yb3+ emission spectrum is around 1000 nm, which matches well with the spectral response of Si solar cells. Introducing 1 mol% of trivalent Bi3+ ions as an additional sensitizer to YZN (BZN), the excitation wavelength is further extended from UV at 270 nm to visible at 450 nm region. As an effect of this, UV excitations at 270 nm, 330 nm, and visible excitation at 450 nm in BZN enhance the luminescence in the near IR region. The DC process observed in BZN is due to the CET process from both the niobate group and Bi3+ ions to Yb3+ ions. Solar panel coated with BZN shows an increase in conversion efficiency which in turn indicates that the synthesized phosphor is a promising material for increasing Si solar cell efficiency.
- Subjects :
- 010302 applied physics
Materials science
Mechanical Engineering
Energy conversion efficiency
Doping
Analytical chemistry
Phosphor
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
law.invention
Ion
Solar cell efficiency
Mechanics of Materials
law
0103 physical sciences
Solar cell
General Materials Science
Emission spectrum
0210 nano-technology
Luminescence
Subjects
Details
- ISSN :
- 13698001
- Volume :
- 122
- Database :
- OpenAIRE
- Journal :
- Materials Science in Semiconductor Processing
- Accession number :
- edsair.doi...........f9bd41caf2896643f9c4ae07edb1a0fb
- Full Text :
- https://doi.org/10.1016/j.mssp.2020.105486