Implementation of an ALD-Al2O3 PERC-Technology into a Multi- and Monocrystalline Industrial Pilot Production

29th European Photovoltaic Solar Energy Conference and Exhibition; 612-616
In this paper, we present the InPERC technology implemented into a multi- and monocrystalline silicon (mc- and Cz-Si) solar cell production of major Asian cell manufacturers. Stable average efficiencies over 18% and 20 % were demonstrated, respectively. Best average efficiencies of 18.4% were achieved on mc-Si solar cells with a best cell efficiency of 18.8%. To reduce the cost of ownership (CoO) of the InPERC upgrade, the annealing step after ALD of Al2O3 was successfully skipped by integrating it into the direct tube PECVD without increase of PECVD process time. Furthermore, the Al2O3 thickness was reduced to 4 nm and the etch removal for rear side smoothening to 2 μm without loss in efficiency. An InPERC module passed all applied accelerated ageing tests (five times humidity freeze, damp heat, PID-test). In a CoO-comparison of different PERC routes, the InPERC technology showed the lowest total CoO and the lowest payback period of all investigated PERC candidates.