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Low Temperature High-k Solution Processed Hybrid Gate Insulator for High Performance Amorphous In-Ga-Zn-O Thin-Film Transistors
- Source :
- 2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
- Publication Year :
- 2019
- Publisher :
- IEEE, 2019.
-
Abstract
- Low temperature process is required to fabricate high performance amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) on plastic substrates for flexible display applications. In addition, high-k material which allows higher mobility, higher drain current and lower threshold voltage while facilitating miniaturization, is poised to replace conventional SiO 2 gate insulators in TFTs. Therefore, hybrid material containing high-k BaTiO 3 nanoparticles and transparent Poly-siloxane (Poly-SX) were used as gate insulator in a-IGZO TFTs. Opting for a hybrid material instead of only a BaTiO 3 film enables lowering of process temperatures. This paper presents the performance of a-IGZO TFTs with solution processed hybrid gate insulators at different BaTiO 3 /Poly-SX ratios deposited at a lower temperature (300°C). The device shows a high mobility of 30.17 cm2/Vs, low threshold voltage of 0.4 V, and leakage current density of ~10−8 A/cm2.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Transistor
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Threshold voltage
Amorphous solid
law.invention
Thin-film transistor
Flexible display
law
0103 physical sciences
Miniaturization
Optoelectronics
0210 nano-technology
Hybrid material
business
High-κ dielectric
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
- Accession number :
- edsair.doi...........fa3d2ffbac6a2c32e437ae5328b7b479
- Full Text :
- https://doi.org/10.23919/am-fpd.2019.8830627