Cite
ESR study of heavily doped GaAs:Er grown by organometallic vapor phase epitaxy
MLA
S. Okubo, et al. ESR Study of Heavily Doped GaAs:Er Grown by Organometallic Vapor Phase Epitaxy. Jan. 2002. EBSCOhost, https://doi.org/10.1016/b978-044450973-4/50055-x.
APA
S. Okubo, Yasufumi Fujiwara, H. Ohtab, J. Yoshikawa, Yoshikazu Takeda, T. Koide, & T. Kawamoto. (2002). ESR study of heavily doped GaAs:Er grown by organometallic vapor phase epitaxy. https://doi.org/10.1016/b978-044450973-4/50055-x
Chicago
S. Okubo, Yasufumi Fujiwara, H. Ohtab, J. Yoshikawa, Yoshikazu Takeda, T. Koide, and T. Kawamoto. 2002. “ESR Study of Heavily Doped GaAs:Er Grown by Organometallic Vapor Phase Epitaxy,” January. doi:10.1016/b978-044450973-4/50055-x.