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Coupling Research of High Power Single GaAs Based Semiconductor Laser
- Source :
- Chinese Journal of Luminescence. 36:1018-1021
- Publication Year :
- 2015
- Publisher :
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 2015.
Details
- ISSN :
- 10007032
- Volume :
- 36
- Database :
- OpenAIRE
- Journal :
- Chinese Journal of Luminescence
- Accession number :
- edsair.doi...........fb1a63942613bfc8397e004014c04ffe