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160–310 GHz frequency doubler in 65-nm CMOS with 3-dBm peak output power for rotational spectroscopy
- Source :
- 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
- Publication Year :
- 2016
- Publisher :
- IEEE, 2016.
-
Abstract
- A 160–310 GHz frequency doubler for rotational spectroscopy with a driver amplifier is demonstrated in a 65-nm bulk CMOS process. At 0-dBm input power, the measured output power (Pout) varies from 3 to −8 dBm. The wide operating range is attributed to wide bandwidth driver and matching structure based on broadband open and short leading to >40dB difference between fundamental and second harmonic power at the output. The doubler-amplifier combination has the comparable output power and a larger operating frequency range than 200–300 GHz COTS GaAs modules.
- Subjects :
- Physics
business.industry
Frequency multiplier
020208 electrical & electronic engineering
Bandwidth (signal processing)
dBm
Electrical engineering
Power bandwidth
020206 networking & telecommunications
02 engineering and technology
CMOS
Broadband
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
Rotational spectroscopy
business
Spectroscopy
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
- Accession number :
- edsair.doi...........fb6e0242ef146413c11d78c632c75fbf