Magnetic and electrical transport study of the antiferromagnetic topological insulator Sn-doped MnBi2Te4

Magnetism coupled with topological materials can offer a platform for realizing quite rich fascinating physical phenomena, including quantum anomalous Hall effect (QAHE), topological magnetoelectric effect, and giant anomalous Nernst effect. Recently, the discovery of the intrinsic magnetic topological insulator ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$ has promoted the study of the physical phenomena of magnetic topological materials. Here, we grow single crystals of Sn-doped ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$ in bulk with ratios of 25%, 33%, 50%, and 66% to probe the magnetic and electrical properties. We perform low-temperature magnetic and electrical transport measurements for Sn-doped ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$ and find that the antiferromagnetic (AFM) character is clear in this material until the concentration rises to 66%, and mainly transport dominated carriers are n-type. Most of all, the transition points of ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$ decrease upon Sn doping, providing an alternative approach to realize QAHE at lower magnetic field, which is essential for further application in AFM spintronics.