Improving the operational characteristic stability in Al/Au/ZnO/Al resistive random access memory devices

Resistive random access memory (ReRAM) devices are considered to be one of the most promising candidates for the next generation of nonvolatile memory devices because of their superior properties such as low power consumption, simple structure, high integration density, and fast operation speed. In this study, we used zinc oxide (ZnO) thin films to fabricate ReRAM devices comprising Au/ZnO/Al and Al/Au/ZnO/Al structures. We observed that the operating stability of the device containing the Al/Au/ZnO/Al structure improved. The devices displayed effective and stable operational characteristics. The operational voltage of the ZnO ReRAM devices was less than 3 V, and the reset operational voltage was less than −1.5 V.