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Improving MOCVD MoS2Electrical Performance: Impact of Minimized Water and Air Exposure Conditions

Authors :
Cedric Huyghebaert
Inge Asselberghs
Alessandra Leonhardt
Iuliana Radu
Stefan De Gendt
Daniele Chiappe
Source :
IEEE Electron Device Letters. 38:1606-1609
Publication Year :
2017
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2017.

Abstract

The effects of oxidants both in the channel and contact regions of MoS2 transistors are discussed through a systematic experimental study. This letter highlights the issues of partial instability in metal-organic chemical vapor deposition MoS2 and proposes a procedure, which considerably improves the electrical characteristics of back-gated transistors. By avoiding ambient exposure and layer oxidation, contact resistance can be reduced and intrinsic mobility increased by 50%.

Details

ISSN :
15580563 and 07413106
Volume :
38
Database :
OpenAIRE
Journal :
IEEE Electron Device Letters
Accession number :
edsair.doi...........fbe7134cf7f5c4d72b4cdc218180c767
Full Text :
https://doi.org/10.1109/led.2017.2752424