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Improving MOCVD MoS2Electrical Performance: Impact of Minimized Water and Air Exposure Conditions
- Source :
- IEEE Electron Device Letters. 38:1606-1609
- Publication Year :
- 2017
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2017.
-
Abstract
- The effects of oxidants both in the channel and contact regions of MoS2 transistors are discussed through a systematic experimental study. This letter highlights the issues of partial instability in metal-organic chemical vapor deposition MoS2 and proposes a procedure, which considerably improves the electrical characteristics of back-gated transistors. By avoiding ambient exposure and layer oxidation, contact resistance can be reduced and intrinsic mobility increased by 50%.
- Subjects :
- Fabrication
Materials science
business.industry
Contact resistance
Transistor
Nanotechnology
02 engineering and technology
Chemical vapor deposition
equipment and supplies
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
Electronic, Optical and Magnetic Materials
law.invention
Air exposure
law
Electrical performance
Optoelectronics
Metalorganic vapour phase epitaxy
Electrical and Electronic Engineering
0210 nano-technology
business
Layer (electronics)
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 38
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........fbe7134cf7f5c4d72b4cdc218180c767
- Full Text :
- https://doi.org/10.1109/led.2017.2752424