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Monolithic MBE GaAs Pin Diode Limiter

Authors :
D.J. Seymour
D.D. Heston
Randall E. Lehmann
Source :
Microwave and Millimeter-Wave Monolithic Circuits.
Publication Year :
2005
Publisher :
MTT007, 2005.

Abstract

A broadband MBE GaAs PIN/NIP diode limiter has demonstrated 15 dB of isolation with a +32.5 dBm input signal while maintaining less than 0.25 dB of small-signal insertion loss from 0.05 GHz to 14 GHz. These results were obtained by incorporating vertical GaAs PIN/NIP diodes in a shunt-loaded microstrip configuration.

Details

Database :
OpenAIRE
Journal :
Microwave and Millimeter-Wave Monolithic Circuits
Accession number :
edsair.doi...........fc2905e60c196ea3586ab601050edf81
Full Text :
https://doi.org/10.1109/mcs.1987.1114511