Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition

In this work we optimized the Ge-spiked monoemitter for the SiGe:C heterojunction bipolar transistor by using low-temperature trisilane based chemical vapor deposition to meet the requirements of high growth rate and high electrically-active doping levels of arsenic. The resultant devices show improvement of open-base breakdown voltage and no degradation of cutoff frequency with incorporation of a Ge spike in the monoemitter.