Observation of harmonic current oscillations on partially oxidized Si(111) surfaces by scanning tunneling microscopy

Spin valve multilayers exhibiting enhanced giant magnetoresistive (GMR) effect and weak interlayer coupling as well as strong exchange biasing were fabricated by a two-step deposition procedure. The down sublayers (i.e., buffer layer Ta/free layer NiFe/interlayer Cu) were deposited at a lower argon pressure, then the upper sublayers (i.e., pinned layer NiFe/pinning layer FeMn/cover layer Ta) were deposited at a higher argon pressure. The former promoted formation of the strong (111) textures, smooth interfaces, and dense Cu film, resulting in a weak interlayer coupling. The latter promoted small domains and less diffusive interfaces, resulting in a strong exchange biasing and an enhanced GMR ratio. This shows that independent control of magnetoresistance, interlayer coupling, and exchange biasing is possible. (C) 1999 American Institute of Physics. [S0021-8979(99)06518-4].