Single‐Ion Implantation: Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms (Adv. Funct. Mater. 21/2021)

Authors :: Nicola Manini
Nguyen H. Le
Guido Fratesi
Marco Turchetti
Giovanni Onida
Giorgio Ferrari
Enrico Prati
Simona Achilli
Takashi Tanii
Takahiro Shinada
Source :: Advanced Functional Materials. 31:2170151
Publication Year :: 2021
Publisher :: Wiley, 2021.

Subjects :: Materials science
Hubbard model
Silicon
Single ion
chemistry.chemical_element
Germanium
Condensed Matter Physics
Molecular physics
Crystallographic defect
Electronic, Optical and Magnetic Materials
Biomaterials
Quantum transport
chemistry
Position (vector)
Electrochemistry
Surface modification

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