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High-Performance Thin-Film Transistors and Inverters Based on ALD-Derived Ultrathin Al2O3-Passivated CeO2 Bilayer Gate Dielectrics
- Source :
- IEEE Transactions on Electron Devices. 69:1065-1068
- Publication Year :
- 2022
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2022.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 69
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........fd48a1ffd6d4e19371e042dc45db3403